Nvidia Mandates TSMC 3nm Base Dies for Custom NVHBM
Nvidia requested that Samsung, Micron, and SK Hynix use TSMC 3nm base dies for its custom NVHBM memory to standardize production and boost performance.
Nvidia Inc. has requested that its high-bandwidth memory suppliers—Samsung Electronics, Micron Technology, and SK Hynix—utilize TSMC's 3nm node for the base dies of its custom NVHBM memory. These base dies house the logic layer responsible for managing the memory controller and interface. By standardizing the design and process across all vendors, Nvidia intends to remove the requirement to validate each supplier's version of the component individually.
Nvidia reports that NVHBM delivers up to 30% more bandwidth and 15% lower power consumption compared to standard HBM4E. This efficiency gain occurs because the base die now absorbs the controller that was previously located on the GPU.
Samsung and Micron have already agreed to the request, with volume production scheduled for 2027. While SK Hynix had previously utilized TSMC's 12nm process for HBM4 base dies, Samsung is currently validating its own 2nm process to serve as a backup supply option.
