Navitas and Microchip Launch 800V AI Data Center Design
Navitas Semiconductor and Microchip Technology developed an 800V DC-to-6V DC reference design to improve power density and efficiency for AI data center rack applications.
Navitas Semiconductor and Microchip Technology have developed an 800V DC-to-6V DC reference design specifically for AI data center rack power applications. The platform integrates Navitas' GaNFast GaN power devices with Microchip's digital power control and TA100 CryptoAuthentication security technology.
Aligned with the Open Compute Project 800V DC standard, the design utilizes 16 NV6034 GaNFast FETs in a stacked half-bridge topology. This configuration targets 96 percent peak efficiency at full load with a 1 MHz switching frequency, enabling a power density of 2,100 W/in³. The low-profile form factor allows for close integration with GPU boards to improve power distribution efficiency and transient performance.
The collaboration aims to reduce development cycles and design risk for next-generation AI infrastructure. Executives from both companies noted that the transition toward higher-voltage rack power systems is a response to the increasingly demanding computing platforms required for AI infrastructure optimization.