ChangXin Memory to Launch 4F Square Server Chips

ChangXin Memory Technologies announced progress in developing a 4F square transistor design for memory chips, aiming to increase storage density and efficiency. The company plans to launch a new server-memory product utilizing this structure by the end of 2026.

Unlike the mainstream 6F square-cell structure used in commercial dynamic random-access memory, the 4F design reduces the area each cell occupies to four square F, where F represents the minimum semiconductor line width. This allows more memory cells to fit on a single chip.

President Cao Kanyu detailed the development during an industrial event in Shanghai. The 4F square structure is also a primary objective for other major memory chip manufacturers, including Samsung Electronics and SK Hynix.